Dr. S.SARAVANAN
Professor, Department of Physics
Sona College of Technology, Salem –
636 005. India
Phone: (0427) 4099796;
Email: saran@sonatech.ac.in , rasisaran@gmail.com
University Degree | Subject | University | Year |
---|---|---|---|
Ph.D. | (Materials science and semiconductors field)"Growth and characterization of GaAs and AlGaAs epilayers on GaAs and Si substrates by LPE and MOCVD" | Anna University*, India(* Part of Ph.D. research was carried at Nagoya Institute of Technology, Japan) | 1999 |
M.Sc | Physics (Special Electronics) | Bharathidasan University, India | 1992 |
B.Sc | Physics (Chemistry & Mathematics as allied subjects) | Madras University, India | 1990 |
Date of Birth | : | 7th April 1969 |
Sex | : | Male |
Nationality | : | Indian |
Marital Status | : | Married |
Position held | Organization | Month and year of Entry | Month and year of Completion | Subject of Research |
---|---|---|---|---|
Junior Research fellow | Crystal Growth Centre (CGC), Anna University, Madras, India | July, 1993 |
January, 1995 |
To work on National Laser Program |
Senior Research fellow | Crystal Growth Centre, Anna University, Madras, India | Feb., 1995 | 19th May 1997 | Growth and characterization of GaAs and AlGaAs epilayers by Liquid Phase Epitaxy(LPE) |
AIEJ fellow | Research Center for Micro-Structure Device, Nagoya Institute of Technology (NIT), Nagoya, Japan | May, 1997 | April, 1998 | Growth and characterization of III-V compound semiconductors by MOCVD. |
Part time Lecturer |
Research Center for Micro-Structure Device, NIT, Nagoya, Japan | Nov., 1998 | Sep., 2001 | Research on GaAs related materials by Chemical Beam Epitaxy (CBE |
Invited Researcher |
Advance Telecommunications Research Institute (ATR), Adaptive communication Research Laboratories (ACR), Kyoto, Japan | Oct., 2001 | Sep, 2003 | Growth and process of optoelectronic devices (Lateral Junction devices and InAs Quantum Dots) Fabrication of self assembling micro structures (MEMS |
Research Scientist |
ATR, Department of Photonics, ACR, Kyoto, Japan | Oct., 2003 | March, 2005 | InAs QD (Nano Technology) Laser for free optical and fiber optic communication and MEMS |
Research Scientist | ATR, Department of Non-linear Science, Wave Engineering Laboratories, Kyoto, Japan | April, 2005 | March 2009 | Crystal Growth for 2D Micro-cavity Lasers and Long wavelength InAs QD (Nano Technology) lasers |
Professor | Department of Physics Sona college of Technology, Salem, Tamilnadu, India |
May 2009 | Till date | Fabrication of semiconductor micro tubes (Nano Technology) |
Language | Reading & Writing | Speaking |
---|---|---|
English | Good | Good |
Japanese | Hiragana, Katakana and limited kanji`s - Good | Good |
NUMBER OF MASTER STUDENTS GUIDED: 3
TECHNOLOGY TRANSFERED: 3
Patents applied | : | 11(Refer Annexure I) |
Papers published in International Journals | : | 55(Refer Annexure II) |
Papers published in National Journals | : | 2(Refer Annexure III) |
Papers Published in proceedings of International conference/ Technical meeting | : | 31 (Refer Annexure IV) |
Papers presented/ accepted in International conference | : | 74 (Refer Annexure V) |
Papers presented/ accepted in National conference | : | 46 (Refer Annexure VI) |
National/ International school/ workshop/conferences attended | : | 46 (Refer Annexure VII) |
International Journals :
National Journals :